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Электронный компонент: JANTX1N4150UR-1.

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MINI-MELF-SMD
Silicon Diode
1N4150UR-1
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma BondTM plating for
problem free solderability
Available in DO-35 package
Applications
Switching
Used in general purpose applications, where a low current controlled
forward characteristic and fast switching speed are important.
BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
MIL-S-19500/ 231 with internal source control drawings.
UR Approval to Mil-S-19500/231
Maximum Ratings
Maximum Ratings
Maximum Ratings
Maximum Ratings
Maximum Ratings
Symbol
Symbol
Symbol
Symbol
Symbol
Value
Value
Value
Value
Value
Unit
Unit
Unit
Unit
Unit
Peak Inverse Voltage
PIV
75 (Min.)
Volts
Average Rectified Current
I
Avg
200
mAmps
Continuous Forward Current
I
Fdc
400
mAmps
Peak Surge Current (t
peak
= 1 sec.)
I
peak
0.5
Amp
BKC Power Dissipation T
L
=50
o
C, L = 3/8" from body
P
tot
500
mWatts
Operating Temperature Range
T
Op
-65 to +200
o
C
Storage Temperature Range
T
St
-65 to +200
o
C
Electrical Characteristics @ 25
Electrical Characteristics @ 25
Electrical Characteristics @ 25
Electrical Characteristics @ 25
Electrical Characteristics @ 25
o
o
o
o
o
C
C
C
C
C
Symbol
Symbol
Symbol
Symbol
Symbol Minimum
Minimum
Minimum
Minimum
Minimum
Maximum
Maximum
Maximum
Maximum
Maximum
Unit
Unit
Unit
Unit
Unit
Forward Voltage Drop @ I
F
= 1.0 mA
V
F
0.54
0.62
Volts
Forward Voltage Drop @ I
F
= 10 mA
V
F
0.66
0.74
Volts
Forward Voltage Drop @ I
F
= 50 mA
V
F
0.76
0.86
Volts
Forward Voltage Drop @ I
F
= 100 m
V
F
0.80
0.92
Volts
Forward Voltage Drop @ I
F
= 200 mA
V
F
0.87
1.0
Volts
Reverse Leakage Current @ V
R
= 50 V
I
R
0.1 (100 @ 150
o
C)
A
Breakdown Voltage @ Ir = 0.1 mA
PIV
75
Volts
Capacitance @ V
R
= 0 V, f = 1mHz
C
T
2.5
pF
Reverse Recovery time (note 1)
t
rr
4.0
nSecs
Reverse Recovery time (note 2,3)
t
rr
6.0
nSecs
Forward Recovery time (note 4)
V
fr
10
nSecs
Note 1: Per Method 4031-A with I
F
= I
R
= 10 to 200 mA, R
L
= 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with I
F
= I
R
= 200 to 400 mA, R
L
= 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I
F
= 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
Note 4: Per Method 4026 with I
F
= 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
D ia .
.06 3 -.0 6 7"
1 .6 -1 .7 m m
0 .1 0 "R E F
2 .5 4 m m R E F
L e n g th
0 .1 3 -0 .1 46 "
3 .3 0 -3 .7 0 m m
B o th E n d C ap s
0 .0 1 6 -.0 22 "
0 .4 1 -0 .5 5 m m
L L -3 4 /3 5 M IN I M E L F
S u rfa ce M o un t P acka g e D O -2 13 A A
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
MSC0960.PDF